具有气相外延电流约束层的InGaAsP/InP λ=1.3μm沟道衬底埋置异质结构激光器

Seventh Topical Meeting on Integrated and Guided-Wave Optics Pub Date : 1900-01-01 DOI:10.1364/igwo.1984.tuc4

D. Wilt, R. Karlicek, K. Strege, W. C. Dautremont-Smith, N. Dutta, E. Flynn, W. D. Johnston, R. Nelson

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引用次数: 0

摘要

采用气相外延(VPE)生长电流约束结构制备了13 μm InGaAsP/InP沟道衬底埋置异质结构激光器，以提高吞吐量并降低器件成本。所制造的器件的截面如图1所示。利用氢化物输运VPE生长三层InP，形成v型槽刻蚀和液相外延再生的npn基结构。

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InGaAsP/InP λ=1.3μm Channelled Substrate Buried Heterostructure Lasers with Vapor Phase Epitaxial Current Confinement Layers

We have fabricated 13 μm InGaAsP/InP channelled substrate buried heterostructure lasers with vapor phase epitaxial (VPE) grown current confinement structures to increase throughput and reduce the cost of devices. The cross section of the device fabricated is indicated in Figure 1. Three layers of InP are grown by hydride transport VPE to form the npn base structure which is v-groove etched and regrown by liquid phase epitaxy.

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Seventh Topical Meeting on Integrated and Guided-Wave Optics

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