I. Dobush, A. Kalentyev, D. Zhabin, A. Goryainov, A. S. Salnikov, F. I. Sheyerman, D. V. Garays
{"title":"1-5 GHz宽带CMOS缓冲放大器的自动合成与测量","authors":"I. Dobush, A. Kalentyev, D. Zhabin, A. Goryainov, A. S. Salnikov, F. I. Sheyerman, D. V. Garays","doi":"10.1109/SIBCON.2017.7998526","DOIUrl":null,"url":null,"abstract":"The design and measurement results of broadband 1–5 GHz buffer amplifier (BA) MMIC based on CMOS transistors (0.25 um SiGe BiCMOS process) are presented. BA's topology was obtained by genetic-algorithm based software tool for structural-parametric synthesis Geneamp. The advantages of the developed amplifier for chosen fabrication process are: broadband frequency (overlap L-, S- and partially C-band); gain is 17.25±0.75 dB; low noise figure — less than 4 dB; high linearity OP1dB — more or equal to 13.2 dBm, OIP3 — more than 23.4 dBm. Designed amplifier is at a level of the best abroad counterparts by the presented above figures of merit. The amplifier design with Geneamp software tool significantly reduced the design time.","PeriodicalId":190182,"journal":{"name":"2017 International Siberian Conference on Control and Communications (SIBCON)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Automated synthesis and measurement of broadband CMOS buffer amplifier 1–5 GHz\",\"authors\":\"I. Dobush, A. Kalentyev, D. Zhabin, A. Goryainov, A. S. Salnikov, F. I. Sheyerman, D. V. Garays\",\"doi\":\"10.1109/SIBCON.2017.7998526\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and measurement results of broadband 1–5 GHz buffer amplifier (BA) MMIC based on CMOS transistors (0.25 um SiGe BiCMOS process) are presented. BA's topology was obtained by genetic-algorithm based software tool for structural-parametric synthesis Geneamp. The advantages of the developed amplifier for chosen fabrication process are: broadband frequency (overlap L-, S- and partially C-band); gain is 17.25±0.75 dB; low noise figure — less than 4 dB; high linearity OP1dB — more or equal to 13.2 dBm, OIP3 — more than 23.4 dBm. Designed amplifier is at a level of the best abroad counterparts by the presented above figures of merit. The amplifier design with Geneamp software tool significantly reduced the design time.\",\"PeriodicalId\":190182,\"journal\":{\"name\":\"2017 International Siberian Conference on Control and Communications (SIBCON)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Siberian Conference on Control and Communications (SIBCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2017.7998526\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2017.7998526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Automated synthesis and measurement of broadband CMOS buffer amplifier 1–5 GHz
The design and measurement results of broadband 1–5 GHz buffer amplifier (BA) MMIC based on CMOS transistors (0.25 um SiGe BiCMOS process) are presented. BA's topology was obtained by genetic-algorithm based software tool for structural-parametric synthesis Geneamp. The advantages of the developed amplifier for chosen fabrication process are: broadband frequency (overlap L-, S- and partially C-band); gain is 17.25±0.75 dB; low noise figure — less than 4 dB; high linearity OP1dB — more or equal to 13.2 dBm, OIP3 — more than 23.4 dBm. Designed amplifier is at a level of the best abroad counterparts by the presented above figures of merit. The amplifier design with Geneamp software tool significantly reduced the design time.