1-5 GHz宽带CMOS缓冲放大器的自动合成与测量

I. Dobush, A. Kalentyev, D. Zhabin, A. Goryainov, A. S. Salnikov, F. I. Sheyerman, D. V. Garays
{"title":"1-5 GHz宽带CMOS缓冲放大器的自动合成与测量","authors":"I. Dobush, A. Kalentyev, D. Zhabin, A. Goryainov, A. S. Salnikov, F. I. Sheyerman, D. V. Garays","doi":"10.1109/SIBCON.2017.7998526","DOIUrl":null,"url":null,"abstract":"The design and measurement results of broadband 1–5 GHz buffer amplifier (BA) MMIC based on CMOS transistors (0.25 um SiGe BiCMOS process) are presented. BA's topology was obtained by genetic-algorithm based software tool for structural-parametric synthesis Geneamp. The advantages of the developed amplifier for chosen fabrication process are: broadband frequency (overlap L-, S- and partially C-band); gain is 17.25±0.75 dB; low noise figure — less than 4 dB; high linearity OP1dB — more or equal to 13.2 dBm, OIP3 — more than 23.4 dBm. Designed amplifier is at a level of the best abroad counterparts by the presented above figures of merit. The amplifier design with Geneamp software tool significantly reduced the design time.","PeriodicalId":190182,"journal":{"name":"2017 International Siberian Conference on Control and Communications (SIBCON)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Automated synthesis and measurement of broadband CMOS buffer amplifier 1–5 GHz\",\"authors\":\"I. Dobush, A. Kalentyev, D. Zhabin, A. Goryainov, A. S. Salnikov, F. I. Sheyerman, D. V. Garays\",\"doi\":\"10.1109/SIBCON.2017.7998526\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and measurement results of broadband 1–5 GHz buffer amplifier (BA) MMIC based on CMOS transistors (0.25 um SiGe BiCMOS process) are presented. BA's topology was obtained by genetic-algorithm based software tool for structural-parametric synthesis Geneamp. The advantages of the developed amplifier for chosen fabrication process are: broadband frequency (overlap L-, S- and partially C-band); gain is 17.25±0.75 dB; low noise figure — less than 4 dB; high linearity OP1dB — more or equal to 13.2 dBm, OIP3 — more than 23.4 dBm. Designed amplifier is at a level of the best abroad counterparts by the presented above figures of merit. The amplifier design with Geneamp software tool significantly reduced the design time.\",\"PeriodicalId\":190182,\"journal\":{\"name\":\"2017 International Siberian Conference on Control and Communications (SIBCON)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Siberian Conference on Control and Communications (SIBCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBCON.2017.7998526\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Siberian Conference on Control and Communications (SIBCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBCON.2017.7998526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

介绍了基于CMOS晶体管(0.25 um SiGe BiCMOS工艺)的宽带1-5 GHz缓冲放大器(BA) MMIC的设计和测量结果。利用基于遗传算法的结构参数综合软件genamp获得了BA的拓扑结构。所开发的放大器的优点是:宽带频率(重叠L-, S-和部分c -波段);增益为17.25±0.75 dB;低噪音指数-低于4分贝;高线性度OP1dB -大于或等于13.2 dBm, OIP3 -大于23.4 dBm。所设计的放大器达到了国外同类产品的最佳水平。利用Geneamp软件工具进行放大器设计,大大缩短了设计时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Automated synthesis and measurement of broadband CMOS buffer amplifier 1–5 GHz
The design and measurement results of broadband 1–5 GHz buffer amplifier (BA) MMIC based on CMOS transistors (0.25 um SiGe BiCMOS process) are presented. BA's topology was obtained by genetic-algorithm based software tool for structural-parametric synthesis Geneamp. The advantages of the developed amplifier for chosen fabrication process are: broadband frequency (overlap L-, S- and partially C-band); gain is 17.25±0.75 dB; low noise figure — less than 4 dB; high linearity OP1dB — more or equal to 13.2 dBm, OIP3 — more than 23.4 dBm. Designed amplifier is at a level of the best abroad counterparts by the presented above figures of merit. The amplifier design with Geneamp software tool significantly reduced the design time.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信