24gs /s 3位分辨率的单核闪存ADC,采用28nm低功耗数字CMOS

G. Tretter, M. Khafaji, D. Fritsche, C. Carta, F. Ellinger
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引用次数: 18

摘要

本文介绍了一种基于28nm低功耗(LP)数字CMOS的24 GS/s、3位闪存ADC的设计和特性。该电路的设计目标是实现单个ADC核心的速度性能高于最先进的水平。该ADC能够在没有时间交错的情况下提供完整的采样率,这使其成为迄今为止据我们所知最快的CMOS单核ADC。该ADC功耗为406mW, 24 GS/s时有效位数(ENOB)为2.2,每个转换步骤的优值(FOM)为3.6 pJ,这是工作在15 GHz以上的单核ADC的最低报告值。该ADC的高采样率通过适度的时间交错实现了超高速ADC系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 24 GS/s single-core flash ADC with 3 bit resolution in 28 nm low-power digital CMOS
This paper presents the design and characterization of a 24 GS/s, 3 bit flash ADC in 28nm low-power (LP) digital CMOS. The circuit was designed with the goal of achieving speed performance above state of the art for a single ADC core. The ADC is capable of delivering its full sampling rate without time interleaving, which makes it the fastest single core ADC in CMOS reported to date to the best of our knowledge. With a power consumption of 406mW and an effective number of bits (ENOB) of 2.2 at 24 GS/s, the ADC achieves a figure of merit (FOM) of 3.6 pJ per conversion step, which is the lowest reported value for single-core ADCs operating above 15 GHz. The very high sampling rate of the presented ADC enables ultra-high-speed ADC systems through moderate time interleaving.
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