{"title":"基于MWCNTs/MMA复合薄膜的SOI CMOS湿度传感器。对制造阶段进行必要的验证","authors":"M. Paun, C. Falco, F. Udrea","doi":"10.1109/SMICND.2015.7355175","DOIUrl":null,"url":null,"abstract":"A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and resistance voltage characteristics have been investigated.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"SOI CMOS humidity sensor based on MWCNTs/MMA composite films. On the necessary verification of fabrication stages\",\"authors\":\"M. Paun, C. Falco, F. Udrea\",\"doi\":\"10.1109/SMICND.2015.7355175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and resistance voltage characteristics have been investigated.\",\"PeriodicalId\":325576,\"journal\":{\"name\":\"2015 International Semiconductor Conference (CAS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2015.7355175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SOI CMOS humidity sensor based on MWCNTs/MMA composite films. On the necessary verification of fabrication stages
A humidity sensor, which is part of an air quality sensor system, based on MWCNTs/MMA composite doped with KOH has been studied. A standard SOI CMOS process, with only one post-processing step for the membrane etching, was used to fabricate the sensor presented. In order to have a homogeneous distribution of the CNTs in the solution, the tip sonication method was employed. The current voltage and resistance voltage characteristics have been investigated.
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