CVD辅助制备用于场效应器件的石墨烯层

2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS) Pub Date : 2011-04-06 DOI:10.1109/DTIS.2011.5941438

Pia Juliane Ginsel, Frank Wessely, Emrah Birinci, U. Schwalke

{"title":"CVD辅助制备用于场效应器件的石墨烯层","authors":"Pia Juliane Ginsel, Frank Wessely, Emrah Birinci, U. Schwalke","doi":"10.1109/DTIS.2011.5941438","DOIUrl":null,"url":null,"abstract":"In this paper, we report on the fabrication and characterization of graphene layers for graphene field effect devices. After the graphene layers are fabricated by means of chemical vapor deposition using a methane feedstock, the band gap is engineered confining the lateral dimensions of graphene in order to obtain graphene nanoribbons. Contacting the graphene nanoribbons with appropriate metallic materials will lead to field effect devices suitable for various applications.","PeriodicalId":409387,"journal":{"name":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"CVD assisted fabrication of graphene layers for field effect device fabrication\",\"authors\":\"Pia Juliane Ginsel, Frank Wessely, Emrah Birinci, U. Schwalke\",\"doi\":\"10.1109/DTIS.2011.5941438\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report on the fabrication and characterization of graphene layers for graphene field effect devices. After the graphene layers are fabricated by means of chemical vapor deposition using a methane feedstock, the band gap is engineered confining the lateral dimensions of graphene in order to obtain graphene nanoribbons. Contacting the graphene nanoribbons with appropriate metallic materials will lead to field effect devices suitable for various applications.\",\"PeriodicalId\":409387,\"journal\":{\"name\":\"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DTIS.2011.5941438\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DTIS.2011.5941438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文报道了用于石墨烯场效应器件的石墨烯层的制备和表征。利用甲烷为原料，通过化学气相沉积法制备石墨烯层后，通过设计带隙来限制石墨烯的横向尺寸，从而获得石墨烯纳米带。将石墨烯纳米带与合适的金属材料接触，可以得到适合各种应用的场效应器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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CVD assisted fabrication of graphene layers for field effect device fabrication

In this paper, we report on the fabrication and characterization of graphene layers for graphene field effect devices. After the graphene layers are fabricated by means of chemical vapor deposition using a methane feedstock, the band gap is engineered confining the lateral dimensions of graphene in order to obtain graphene nanoribbons. Contacting the graphene nanoribbons with appropriate metallic materials will lead to field effect devices suitable for various applications.

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来源期刊

2011 6th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS)

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