电离辐射作用下掺杂离子性质和含量对铝硼硅酸盐玻璃缺陷形成过程的影响

E. Malchukova
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引用次数: 2

摘要

利用电子顺磁共振(EPR)和光谱学研究了电离辐照对稀土(RE = Sm, Gd, Eu, Ce, Nd)掺铝硼硅酸盐玻璃缺陷形成过程的影响。作为稀土离子性质的函数,我们观察到掺杂显著影响辐照过程中产生的缺陷的性质,特别是空穴和电子缺陷中心之间的相对比例。在不依赖电离辐射的情况下,稀土掺杂量和不同氧化态稀土的相对稳定性对缺陷生产效率的影响也很大。这一结果可以用辐照过程中产生的电子-空穴对的动态可逆俘获以及ABS玻璃结构中稀土偏析和预先存在缺陷的形成来解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of the Doping Ion Nature and Content on Defect Creation Processes under the Effect of Ionizing Radiation in Aluminoborosilicate Glasses
Effects of ionizing irradiation on defect creation processes have been studied in rare earth (RE)-doped (RE = Sm, Gd, Eu, Ce, Nd) aluminoborosilicate glass with use of the electron paramagnetic resonance (EPR) and optical spectroscopy. As a function of RE ion nature, we observe that doping significantly influences the nature of the defects produced during irradiation and more specifically the relative proportions between hole and electron defect centers. Strong decrease of defect production efficiency under ionizing radiation independence on both the RE doping content and on the relative stability of the RE different oxidation states is also clearly revealed. The results could be explained by dynamical reversible trapping of the electron-hole pairs produced during irradiation on the different RE charge states as well as by RE segregation and pre-existing defects speciation in ABS glass structure.
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