准弹道输运区漂移扩散模型的蒙特卡罗参数定标

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242303

Lei Shen, S. Di, L. Yin, Xiaoyan Liu, G. Du

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引用次数: 0

摘要

随着器件尺寸缩小到10nm以下，准弹道输运变得非常重要。以前的一些工作建议通过修改输运参数，采用DD方法来考虑准弹道输运效应。介绍了一种利用MC设备模拟器的仿真结果标定DD模型传输参数的方法。

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Parameter calibration of drift-diffusion model in quasi-ballisitc transport region with Monte Carlo method

As the device scaling down to sub-10nm, the quasi-ballistic transport becomes important. Some previous works have suggested using DD method to involve the quasi-ballistic transport effect through modifying the transport parameters. A procedure is introduced to calibrate the transport parameters of the DD model by using the simulation results of MC device simulator.

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2017 Silicon Nanoelectronics Workshop (SNW)

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