28nm UTBB FD-SOI CMOS工艺中的2.8 ~ 5.8 GHz谐波压控振荡器

Luca Fanori, Ahmed Mahmoud, T. Mattsson, Peter Caputa, Sami Ramo, P. Andreani
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引用次数: 8

摘要

采用28nm UTBB FD-SOI CMOS工艺设计的2.8- 5.8 ghz压控振荡器采用可重构有源内核,在较低振荡频率下节省功耗,并在所有频率下实现功耗和相位噪声之间的权衡。UTBB FD-SOI CMOS工艺有助于在低功耗下实现超过一个倍频程的调谐范围,而使用8形槽线圈产生对外部磁场高度不敏感的压控振荡器。VCO的工作电压为0.9V,性能因数为186-189 dBc/Hz,具体取决于振荡频率和振荡器核心的配置。VCO的有效面积为380 μm × 700 μm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 2.8-to-5.8 GHz harmonic VCO in a 28 nm UTBB FD-SOI CMOS process
A 2.8-to-5.8GHz VCO designed in a 28nm UTBB FD-SOI CMOS process adopts a reconfigurable active core to save power at the lower oscillation frequencies, and to enable a trade-off between power consumption and phase noise at all frequencies. The UTBB FD-SOI CMOS process is instrumental to achieve a tuning range in excess of one octave at low power consumption, while the use of an 8-shaped tank coil yields a VCO that is highly insensitive to external magnetic fields. The VCO operates from 0.9V and has a figure-of-merit of 186-189 dBc/Hz, depending on the oscillation frequency and the configuration of the oscillator core. The active area of the VCO is 380 μm × 700 μm.
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