基于SPICE的多指GaAs/GaN场效应管热建模

2014 1st Australian Microwave Symposium (AMS) Pub Date : 2014-06-26 DOI:10.1109/AUSMS.2014.7017339

J. Tarazi, A. Parker, B. Schwitter, S. Mahon

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引用次数: 1

摘要

提出了一个简单的热模型来估计多指GaAs和GaN高电子迁移率晶体管(hemt)的结温。该模型在SPICE中通过将热流类比为电流流动来实现。该模型能够全面研究设备的不同布局可能性。三维有限元模型(FEM)和栅极金属电阻测温(GMRT)结果与模型进行了比较。

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Thermal modelling of multifinger GaAs/GaN FETs using SPICE

A simple thermal model is presented to estimate the junction temperature in multi-finger GaAs and GaN high electron mobility transistors (HEMTs). The model is implemented in SPICE by treating heat flow as analogous to the flow of electric current. The model enables a comprehensive study of different layout possibilities for devices. Results from 3D Finite Element Model (FEM) simulation and from Gate Metal Resistance Thermometry (GMRT) are compared with the model.

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2014 1st Australian Microwave Symposium (AMS)

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