HfO/sub 2/ Ge mosfet表面钝化新工艺

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367762

N. Wu, Qingchun Zhang, Chunxiang Zhu, D. Chan, M. Li, N. Balasubramanian, A. Du, A. Chin, J. Sin, D. Kwong

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引用次数: 0

摘要

本工作提出了一种新的HfO/sub 2/ Ge mosfet表面钝化工艺，该工艺在HfO/sub 2/沉积之前使用原位SiH/sub 4/处理。结果表明，与传统表面氮化相比，原位SiH/sub - 4/表面处理的TaN/HfO/sub - 2//Ge pmosfet具有显著降低频散和迟滞的特性，改善栅极泄漏分布，改善亚阈值振荡，提高空穴迁移率。

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A novel surface passivation process for HfO/sub 2/ Ge MOSFETs

This work presents a novel surface passivation process for HfO/sub 2/ Ge MOSFETs which we have developed, using in-situ SiH/sub 4/ treatment prior to HfO/sub 2/ deposition. Results show that, compared to conventional surface nitridation, TaN/HfO/sub 2//Ge pMOSFETs with in-situ SiH/sub 4/ surface treatment have much reduced frequency dispersion and hysteresis, improved gate leakage distribution, better subthreshold swing and higher hole mobility.

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来源期刊

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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