S. Ohkubo, Y. Tamura, R. Sugino, T. Nakanishi, Y. Sugita, N. Awaji, K. Takasaki
{"title":"采用UV/O/sub - 3/表面预处理的高品质超薄(4nm)栅极氧化物","authors":"S. Ohkubo, Y. Tamura, R. Sugino, T. Nakanishi, Y. Sugita, N. Awaji, K. Takasaki","doi":"10.1109/VLSIT.1995.520882","DOIUrl":null,"url":null,"abstract":"A significant improvement in ultra-thin (4 nm) gate oxide quality has been carried out using UV/O/sub 3/ pre-treatment of native oxide before thermal oxidation. UV/O/sub 3/ pre-treatment makes native oxide dense and close-packed without leaving any residue species. Ultra-thin gate oxide formed by UV/O/sub 3/ pre-treatment and O/sub 3/ oxidation has been found to have excellent behavior, low leakage current, low surface state density, and superior dielectric breakdown characteristics. UV/O/sub 3/ pre-treatment looks promising for using in ultra-thin gate oxidation necessary for 0.1 /spl mu/m ULSI fabrication.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High quality ultra-thin (4 nm) gate oxide by UV/O/sub 3/ surface pre-treatment of native oxide\",\"authors\":\"S. Ohkubo, Y. Tamura, R. Sugino, T. Nakanishi, Y. Sugita, N. Awaji, K. Takasaki\",\"doi\":\"10.1109/VLSIT.1995.520882\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A significant improvement in ultra-thin (4 nm) gate oxide quality has been carried out using UV/O/sub 3/ pre-treatment of native oxide before thermal oxidation. UV/O/sub 3/ pre-treatment makes native oxide dense and close-packed without leaving any residue species. Ultra-thin gate oxide formed by UV/O/sub 3/ pre-treatment and O/sub 3/ oxidation has been found to have excellent behavior, low leakage current, low surface state density, and superior dielectric breakdown characteristics. UV/O/sub 3/ pre-treatment looks promising for using in ultra-thin gate oxidation necessary for 0.1 /spl mu/m ULSI fabrication.\",\"PeriodicalId\":328379,\"journal\":{\"name\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1995.520882\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High quality ultra-thin (4 nm) gate oxide by UV/O/sub 3/ surface pre-treatment of native oxide
A significant improvement in ultra-thin (4 nm) gate oxide quality has been carried out using UV/O/sub 3/ pre-treatment of native oxide before thermal oxidation. UV/O/sub 3/ pre-treatment makes native oxide dense and close-packed without leaving any residue species. Ultra-thin gate oxide formed by UV/O/sub 3/ pre-treatment and O/sub 3/ oxidation has been found to have excellent behavior, low leakage current, low surface state density, and superior dielectric breakdown characteristics. UV/O/sub 3/ pre-treatment looks promising for using in ultra-thin gate oxidation necessary for 0.1 /spl mu/m ULSI fabrication.
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