存在邻近依赖应力效应时的设计布局优化

A. Sultan, R. Ramzan, D. Wristers
{"title":"存在邻近依赖应力效应时的设计布局优化","authors":"A. Sultan, R. Ramzan, D. Wristers","doi":"10.1109/ICICDT.2014.6838594","DOIUrl":null,"url":null,"abstract":"In this paper, we present Minimized Layout Effect (MINLAYEF) guidelines for reducing the layout and process variations in critical analog circuits. We also present digital design guidelines to minimize the effect of process variations by eliminating stress sources. We also propose a layout for a reference device for a dual stress liner (DSL) device architecture to improve the accuracy of simulations. Si results from circuit layout designed with and without layout guidelines are also presented.","PeriodicalId":325020,"journal":{"name":"2014 IEEE International Conference on IC Design & Technology","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design layout optimization in the presence of proximity-dependent stress effects\",\"authors\":\"A. Sultan, R. Ramzan, D. Wristers\",\"doi\":\"10.1109/ICICDT.2014.6838594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present Minimized Layout Effect (MINLAYEF) guidelines for reducing the layout and process variations in critical analog circuits. We also present digital design guidelines to minimize the effect of process variations by eliminating stress sources. We also propose a layout for a reference device for a dual stress liner (DSL) device architecture to improve the accuracy of simulations. Si results from circuit layout designed with and without layout guidelines are also presented.\",\"PeriodicalId\":325020,\"journal\":{\"name\":\"2014 IEEE International Conference on IC Design & Technology\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Conference on IC Design & Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2014.6838594\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Conference on IC Design & Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2014.6838594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

在本文中,我们提出最小化布局效应(MINLAYEF)指南,以减少关键模拟电路的布局和工艺变化。我们还提出了数字设计指南,通过消除应力源来最大限度地减少工艺变化的影响。为了提高模拟的精度,我们还提出了一种双应力线(DSL)器件结构的参考器件的布局。本文还介绍了采用和不采用布线准则设计电路的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design layout optimization in the presence of proximity-dependent stress effects
In this paper, we present Minimized Layout Effect (MINLAYEF) guidelines for reducing the layout and process variations in critical analog circuits. We also present digital design guidelines to minimize the effect of process variations by eliminating stress sources. We also propose a layout for a reference device for a dual stress liner (DSL) device architecture to improve the accuracy of simulations. Si results from circuit layout designed with and without layout guidelines are also presented.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信