FD-SOI BIMOS中内置BJT的研究

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-03-01 DOI:10.1109/ULIS.2018.8354761

T. Bedecarrats, P. Galy, C. Fenouillet-Béranger, S. Cristoloveanu

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引用次数: 4

摘要

采用ST微电子公司的28nm UTBB FD-SOI高k金属技术制造的BIMOS的内置BJT在共发射极模式和MOSFET关闭状态下进行了研究。在弱VBE状态下，场效应占主导地位，产生负基极电流，使电流增益β0毫无意义。对于Vbe足够高，BJT工作正常，但与和一个非常低的增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation on built-in BJT in FD-SOI BIMOS

The built-in BJT of a BIMOS fabricated in 28nm UTBB FD-SOI high-k metal technology from ST Microelectronics is investigated in common-emitter mode and in MOSFET off-state. In the weak VBE regime, field-effects dominate, generating a negative base current and making the current gain β0 meaningless. For Vbe high enough, the BJT works normally but with and a very low gain.

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来源期刊

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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