New 500V output device structures for thin silicon layer on silicon dioxide film

Studies into a 20 w deep trench technique for dielectric isolation and a high voltage lateral device structure for thin silicon layers have been carried out. These techniques can be applied to high voltage power ICs with high density packing. These proposed structures are characterized by a very shallow N-type diffusion layer on a bottom film of relatively thick silicon dioxide. Breakdown simulation was carried out by means of the two-dimensional device simulator TONADDEIIB. It was shown that a breakdown voltage of more than 500 V can be obtained with a 20 thick silicon layer structure.