基于虚拟样机的并联SiC功率mosfet稳定性分析

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2023-05-28 DOI:10.1109/ISPSD57135.2023.10147660

Michel Nagel, Ivana Kovacevic-Badstuebner, Race Salvatore, D. Popescu, B. Popescu, D. Romano, Giulio Antonini, U. Grossner

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引用次数: 0

摘要

本文提出了一种新的建模方法，用于评估并联的SiC功率MOSFET的稳定性，考虑了电压相关的MOSFET C-V和I-V特性，以及频率相关的PCB布局寄生。结果表明，开关电路是时变的，因此，必须在时域和频域进行分析，才能完全理解(非)稳定振荡。这种双域分析有助于设计具有并联SiC功率mosfet的优化电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Stability Analysis of Parallel SiC power MOSFETs based on a Virtual Prototype

This paper presents a novel modeling approach for assessing the stability of SiC power MOSFETs connected in parallel considering the voltage-dependent MOSFET C-V and I-V characteristics, as well as the frequency-dependent PCB layout parasitics. It is shown that the switching circuit is time-variant and hence, has to be analyzed both in the time-and frequency-domain to have a complete understanding of the (un)stable oscillations. Such a two-domain analysis can be beneficial for designing optimized circuits with parallel SiC power MOSFETs.

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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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