{"title":"金/多孔硅薄膜的电输运和阻抗分析","authors":"F. Fonthal, C. Goyes, A. Rodroguez","doi":"10.1109/CERMA.2008.62","DOIUrl":null,"url":null,"abstract":"In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100>substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.","PeriodicalId":126172,"journal":{"name":"2008 Electronics, Robotics and Automotive Mechanics Conference (CERMA '08)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electrical Transport and Impedance Analysis of Au/Porous Silicon Thin Films\",\"authors\":\"F. Fonthal, C. Goyes, A. Rodroguez\",\"doi\":\"10.1109/CERMA.2008.62\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100>substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.\",\"PeriodicalId\":126172,\"journal\":{\"name\":\"2008 Electronics, Robotics and Automotive Mechanics Conference (CERMA '08)\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 Electronics, Robotics and Automotive Mechanics Conference (CERMA '08)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CERMA.2008.62\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Electronics, Robotics and Automotive Mechanics Conference (CERMA '08)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CERMA.2008.62","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical Transport and Impedance Analysis of Au/Porous Silicon Thin Films
In order to obtain electronic devices based on PS/p-Si structure, we present a study the AC conductivity and Thermo-electrical behavior of Porous Silicon (PS) layers prepared by electrochemical etching in p-type silicon (p-Si) <100>substrates. The beginning is obtaining good electrical contacts on porous layer; for this reason, several Au/PS/Au junctions were electrically characterized to understand the transport mechanisms in porous surface and the temperature dependence in the porous properties studied, also the resistance-temperature characteristic of PS/p-Si thermistor device. Finally, we obtained the AC conductivity in modulo and phase; an electrical equivalent circuit was proposed to fit the experimental frequency response of the different samples.
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