双排高度标准单元格的设计与基准测试

Yu-Xiang Chiang, Cheng-Wei Tai, Shang-Rong Fang, Kai-Chun Peng, Yuan-Dar Chung, Jin-Kai Yang, Rung-Bin Lin
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引用次数: 6

摘要

本文介绍了我们设计双行高度标准单元库的经验及其在芯片设计中的应用。基于FreePDK15中规定的15nm工艺技术,设计了7个单元库。单排高度为7.5 M2的轨道作为设计双排高度单元格的基础。两个最小尺寸的晶体管,一个有两个翅片,另一个有四个翅片,用于设计1X驱动强度的电池。在七个库中,两个库仅包含单行高度单元格。其他五个库分别由部分单行高度单元格和双行高度单元格组成。我们的实验表明,双排高度库可以实现平均-2%至21%的面积节省和-23%至19%的功耗延迟面积产品。我们的结果还表明,如果需要广泛的晶体管折叠,使用大型最小尺寸晶体管来设计双排高度库是不可行的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Designing and Benchmarking of Double-Row Height Standard Cells
This article presents our experience of designing double-row height standard cell libraries and their use for chip designs. Seven cell libraries are designed based on the 15nm process technology stipulated in FreePDK15. A single-row height of 7.5 M2 tracks is used as a basis for designing double-row height cells. Two minimum-sized transistors, one having two fins and the other having four fins, are employed to design 1X drive-strength cells. Among the seven libraries, two libraries consist of only single-row height cells. The other five libraries each consist of partly single-row height cells and double-row height cells. Our experiments show that a double-row height library can achieve on average -2% to 21% area saving and -23% to 19% smaller power-delay-area product. Our results also show that using a large minimum-sized transistor for designing a double-row height library is not viable if extensive transistor folding is required.
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