采用一种新的保护电路，提高了发射极开关晶闸管的抗短路能力

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239987

B. Jeon, I. Ji, Soo-Seong Kim, Seung-Chul Lee, Yearn-Ik Choi, M. Han

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引用次数: 2

摘要

提出并制作了一种新的保护电路，提高了发射极开关晶闸管(EST)的抗短路能力。实验结果表明，当保护电路降低栅极电压时，采用该保护电路的EST表现出高电压电流饱和。我们还通过二维模拟研究了其机理。

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Enhanced short-circuit withstanding capability of the emitter switched thyristor (EST) by employing a new protection circuit

A new protection circuit, which improves the short-circuit withstanding capability of an emitter switched thyristor (EST) is proposed and fabricated. Experimental results show that the EST employing the protection circuit exhibits a high voltage current saturation when the protection circuit reduces the gate voltage. We have also investigated the mechanism by employing two-dimensional simulation.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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