紫外光和低温对溶液加工高性能金属氧化物半导体和tft的影响

Proceedings of the 5th Electronics System-integration Technology Conference (ESTC) Pub Date : 2014-11-24 DOI:10.1109/ESTC.2014.6962762

H. Majumdar, J. Leppaniemi, K. Ojanpera, Olli‐Heikki Huttunen, A. Alastalo

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引用次数: 1

摘要

本文主要研究了用于薄膜晶体管(TFTs)的溶液处理金属氧化物(MO)半导体的紫外固化。目标是将低温热退火与紫外线曝光相结合，在柔性塑料衬底上实现可打印晶体管。本文重点介绍了两种不同波长的紫外光的使用，并阐明了它们对金属氧化物半导体性能的影响。对用这些半导体制成的tft的电学性能进行了表征。结果表明，紫外曝光波长对优化半导体和tft的性能至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of UV light and low temperature on solution-processed, high-performance metal-oxide semiconductors and TFTs

This paper focuses on ultra-violet (UV)-curing of solution-processed metal-oxide (MO) semiconductors for application in thin film transistors (TFTs). The goal is to combine low-temperature thermal annealing with UV exposure and achieve printable transistors on flexible plastic substrates. In this paper we focus on the use of two different wavelengths of UV and clarify their effect on the performance of the metal-oxide semiconductors. The electrical properties of TFTs made with these semiconductors are characterized. The results show that wavelength of the UV exposure is critical for optimized performance of the semiconductor and the TFTs.

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Proceedings of the 5th Electronics System-integration Technology Conference (ESTC)

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