基于BDD的高速忆阻电路设计综合技术

Anindita Chakraborty, Rakesh Das, Chandan Bandyopadhyay, H. Rahaman
{"title":"基于BDD的高速忆阻电路设计综合技术","authors":"Anindita Chakraborty, Rakesh Das, Chandan Bandyopadhyay, H. Rahaman","doi":"10.1109/ISVDAT.2016.8064842","DOIUrl":null,"url":null,"abstract":"Recently, a passive device — memristor has received wide attention in nano-scale design due to its applications in the area of nanoelectronic memory design, neuromorphic computing and logic design. This passive element is non-volatile in nature and has dual properties of memory and resistor. In recent time, the application of this device in designing high speed logic circuits has now opened a new research domain in nano-scale design. This work presents an efficient design technique implementing logic functions using memristor. The proposed design methodology not only speed-up the response time of the circuits but can also deal with functions with larger input size (beyond 100 variables). Our entire design scheme is divided in two phases. In the first phase, we use Binary Decision Diagrams (BDDs) to represent input logic functions and in second phase, a technology mapping is performed that generates memristor based circuits corresponding to this BDD graphs. Comparative analysis with existing works is given and we find that our design steadily improves the average performance of circuits.","PeriodicalId":301815,"journal":{"name":"2016 20th International Symposium on VLSI Design and Test (VDAT)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"BDD based synthesis technique for design of high-speed memristor based circuits\",\"authors\":\"Anindita Chakraborty, Rakesh Das, Chandan Bandyopadhyay, H. Rahaman\",\"doi\":\"10.1109/ISVDAT.2016.8064842\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, a passive device — memristor has received wide attention in nano-scale design due to its applications in the area of nanoelectronic memory design, neuromorphic computing and logic design. This passive element is non-volatile in nature and has dual properties of memory and resistor. In recent time, the application of this device in designing high speed logic circuits has now opened a new research domain in nano-scale design. This work presents an efficient design technique implementing logic functions using memristor. The proposed design methodology not only speed-up the response time of the circuits but can also deal with functions with larger input size (beyond 100 variables). Our entire design scheme is divided in two phases. In the first phase, we use Binary Decision Diagrams (BDDs) to represent input logic functions and in second phase, a technology mapping is performed that generates memristor based circuits corresponding to this BDD graphs. Comparative analysis with existing works is given and we find that our design steadily improves the average performance of circuits.\",\"PeriodicalId\":301815,\"journal\":{\"name\":\"2016 20th International Symposium on VLSI Design and Test (VDAT)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 20th International Symposium on VLSI Design and Test (VDAT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISVDAT.2016.8064842\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 20th International Symposium on VLSI Design and Test (VDAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISVDAT.2016.8064842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

近年来,无源器件忆阻器由于在纳米电子存储设计、神经形态计算和逻辑设计等领域的广泛应用,在纳米设计领域受到了广泛的关注。这种无源元件本质上是非易失性的,具有存储器和电阻的双重特性。近年来,该器件在高速逻辑电路设计中的应用为纳米级设计开辟了一个新的研究领域。本文提出了一种利用忆阻器实现逻辑功能的有效设计方法。所提出的设计方法不仅加快了电路的响应时间,而且可以处理较大输入规模(超过100个变量)的函数。我们的整个设计方案分为两个阶段。在第一阶段,我们使用二进制决策图(BDD)来表示输入逻辑函数,在第二阶段,执行技术映射,生成与该BDD图对应的基于忆阻器的电路。通过与现有电路的对比分析,我们发现我们的设计稳步提高了电路的平均性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BDD based synthesis technique for design of high-speed memristor based circuits
Recently, a passive device — memristor has received wide attention in nano-scale design due to its applications in the area of nanoelectronic memory design, neuromorphic computing and logic design. This passive element is non-volatile in nature and has dual properties of memory and resistor. In recent time, the application of this device in designing high speed logic circuits has now opened a new research domain in nano-scale design. This work presents an efficient design technique implementing logic functions using memristor. The proposed design methodology not only speed-up the response time of the circuits but can also deal with functions with larger input size (beyond 100 variables). Our entire design scheme is divided in two phases. In the first phase, we use Binary Decision Diagrams (BDDs) to represent input logic functions and in second phase, a technology mapping is performed that generates memristor based circuits corresponding to this BDD graphs. Comparative analysis with existing works is given and we find that our design steadily improves the average performance of circuits.
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