利用闪光灯退火技术研究可扩展可重构场效应晶体管

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI:10.1109/DRC50226.2020.9135146

M. B. Khan, Sayantani Ghosh, S. Prucnal, T. Mauersberger, R. Hübner, M. Simon, T. Mikolajick, A. Erbe, Y. Georgiev

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引用次数: 1

摘要

几十年来，逻辑电路的小型化是场效应晶体管(FET)小型化的结果。这种规模已经达到了极限，因此，新的设备材料和概念在过去几年一直在研究中。一种方法是增加单个设备的功能，而不是缩小其尺寸。这种器件概念就是可重构场效应管(reconfigurable FET, RFET)，它可以动态配置为n极性或p极性[1]。

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Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing

For decades the miniaturization of logic circuitry was a result of down scaling of the field effect transistor (FET). This scaling has reached its end and, therefore, new device materials and concepts have been under research for the last years. One approach is to increase the functionality of an individual device rather than scaling down its size. Such a device concept is the reconfigurable FET (RFET), which can be configured to n- or p- polarity dynamically [1] .

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2020 Device Research Conference (DRC)

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