记忆电阻器产生神经元尖峰事件

2012 13th International Workshop on Cellular Nanoscale Networks and their Applications Pub Date : 2012-10-18 DOI:10.1109/CNNA.2012.6331427

Sangho Shin, D. Sacchetto, Yusuf Leblebici, S. Kang

{"title":"记忆电阻器产生神经元尖峰事件","authors":"Sangho Shin, D. Sacchetto, Yusuf Leblebici, S. Kang","doi":"10.1109/CNNA.2012.6331427","DOIUrl":null,"url":null,"abstract":"New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced charging and discharging periods of the spike signals. With a Pt/TiO2/Pt memristive device having the ROFF/RON resistance ratio of 3000, the memristor-based spike generator offers spike trains with about 0.03% duty.","PeriodicalId":387536,"journal":{"name":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Neuronal spike event generation by memristors\",\"authors\":\"Sangho Shin, D. Sacchetto, Yusuf Leblebici, S. Kang\",\"doi\":\"10.1109/CNNA.2012.6331427\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced charging and discharging periods of the spike signals. With a Pt/TiO2/Pt memristive device having the ROFF/RON resistance ratio of 3000, the memristor-based spike generator offers spike trains with about 0.03% duty.\",\"PeriodicalId\":387536,\"journal\":{\"name\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CNNA.2012.6331427\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.2012.6331427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

介绍了一种基于记忆电阻器的神经元脉冲事件发生器。利用实际双稳态记忆器件条件电阻开关的动态特性，生成了既描述了神经膜细胞的积分-放电尖峰事件又描述了神经膜细胞足够长的不应期的神经元动作电位。忆阻器提供了双时间常数来模拟尖峰信号的不平衡充放电周期。采用ROFF/RON电阻比为3000的Pt/TiO2/Pt忆阻器件，基于忆阻器的尖峰发生器提供约0.03%负载的尖峰串。

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Neuronal spike event generation by memristors

New memristors-based neuronal spike event generator is introduced. By using the dynamic properties of conditional resistance switching of a practical bistable memristive device, the neuronal action potential is generated describing both the integrate-and-fire spiking events and the long enough refractory period of nerve membrane cells. The memristor offers the dual time-constants which model the unbalanced charging and discharging periods of the spike signals. With a Pt/TiO2/Pt memristive device having the ROFF/RON resistance ratio of 3000, the memristor-based spike generator offers spike trains with about 0.03% duty.

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2012 13th International Workshop on Cellular Nanoscale Networks and their Applications

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