在BEOL层中实现NEM继电器的设计优化

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2017-10-01 DOI:10.1109/S3S.2017.8309249

U. Sikder, T. Liu

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引用次数: 5

摘要

本工作讨论了利用后端线(BEOL)金属层的标准CMOS制造工艺实现纳米机电(NEM)继电器的设计考虑。利用covenor MEMS+对继电器的准静态和动态性能进行了仿真。讨论了各种设计权衡。提出了一种最小化能量延迟积的优化设计方案。

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Design optimization for NEM relays implemented in BEOL layers

This work discusses design considerations for a nano-electro-mechanical (NEM) relay implemented with a standard CMOS fabrication process utilizing the back-end-of-line (BEOL) metal layers. The quasi-static and dynamic performances of the relay are simulated using Coventor MEMS+. Various design trade-offs are discussed. A design optimization scheme for minimizing the energy-delay product is presented.

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来源期刊

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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