卷起Si/SiGe异质结构中的低温空穴迁移率

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743367

N. Demarina, D. Gruetzmacher

{"title":"卷起Si/SiGe异质结构中的低温空穴迁移率","authors":"N. Demarina, D. Gruetzmacher","doi":"10.1109/ASDAM.2008.4743367","DOIUrl":null,"url":null,"abstract":"We present a theoretical study of the low-field hole mobility in modulation doped scrolled SiGe heterostructures which can be realized from rolled-up strained Si-SiGe films. The simulation of the hole transport along the structure axis is based on a Monte Carlo method and includes hole interaction with phonons and interface roughness at low temperature. We show that the hole mobility is mainly limited by interface roughness scattering and can reach a value of 2times104 cm2/Vs.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-temperature hole mobility in rolled-up Si/SiGe heterostructures\",\"authors\":\"N. Demarina, D. Gruetzmacher\",\"doi\":\"10.1109/ASDAM.2008.4743367\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a theoretical study of the low-field hole mobility in modulation doped scrolled SiGe heterostructures which can be realized from rolled-up strained Si-SiGe films. The simulation of the hole transport along the structure axis is based on a Monte Carlo method and includes hole interaction with phonons and interface roughness at low temperature. We show that the hole mobility is mainly limited by interface roughness scattering and can reach a value of 2times104 cm2/Vs.\",\"PeriodicalId\":306699,\"journal\":{\"name\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2008.4743367\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743367","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们从理论上研究了调制掺杂的低场空穴迁移率，这种迁移率可以通过卷起的应变Si-SiGe薄膜来实现。基于蒙特卡罗方法模拟了空穴沿结构轴的输运过程，包括空穴与声子的相互作用和低温下的界面粗糙度。我们发现，空穴迁移率主要受界面粗糙度散射的限制，可以达到2times104 cm2/Vs。

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Low-temperature hole mobility in rolled-up Si/SiGe heterostructures

We present a theoretical study of the low-field hole mobility in modulation doped scrolled SiGe heterostructures which can be realized from rolled-up strained Si-SiGe films. The simulation of the hole transport along the structure axis is based on a Monte Carlo method and includes hole interaction with phonons and interface roughness at low temperature. We show that the hole mobility is mainly limited by interface roughness scattering and can reach a value of 2times104 cm2/Vs.

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来源期刊

2008 International Conference on Advanced Semiconductor Devices and Microsystems

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