{"title":"多数载波和少数载波触发外锁的建模","authors":"F. Farbiz, E. Rosenbaum","doi":"10.1109/RELPHY.2008.4558897","DOIUrl":null,"url":null,"abstract":"Circuit models are presented that allow one to identify the worst-case testing condition for external latchup and to simulate the value of the latchup trigger current. The models are valid under both moderate and high-level injection. A good fit between the model and the measurements is observed. The roles of substrate majority and minority carriers are elucidated.","PeriodicalId":187696,"journal":{"name":"2008 IEEE International Reliability Physics Symposium","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Modeling of majority and minority carrier triggered external latchup\",\"authors\":\"F. Farbiz, E. Rosenbaum\",\"doi\":\"10.1109/RELPHY.2008.4558897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Circuit models are presented that allow one to identify the worst-case testing condition for external latchup and to simulate the value of the latchup trigger current. The models are valid under both moderate and high-level injection. A good fit between the model and the measurements is observed. The roles of substrate majority and minority carriers are elucidated.\",\"PeriodicalId\":187696,\"journal\":{\"name\":\"2008 IEEE International Reliability Physics Symposium\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2008.4558897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2008.4558897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of majority and minority carrier triggered external latchup
Circuit models are presented that allow one to identify the worst-case testing condition for external latchup and to simulate the value of the latchup trigger current. The models are valid under both moderate and high-level injection. A good fit between the model and the measurements is observed. The roles of substrate majority and minority carriers are elucidated.