D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori
{"title":"电场控制双层CrI3的自旋输运","authors":"D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori","doi":"10.1109/ESSCIRC53450.2021.9567800","DOIUrl":null,"url":null,"abstract":"We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.","PeriodicalId":129785,"journal":{"name":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electric-field controlled spin transport in bilayer CrI3\",\"authors\":\"D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori\",\"doi\":\"10.1109/ESSCIRC53450.2021.9567800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.\",\"PeriodicalId\":129785,\"journal\":{\"name\":\"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC53450.2021.9567800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC53450.2021.9567800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electric-field controlled spin transport in bilayer CrI3
We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.