电场控制双层CrI3的自旋输运

D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori
{"title":"电场控制双层CrI3的自旋输运","authors":"D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori","doi":"10.1109/ESSCIRC53450.2021.9567800","DOIUrl":null,"url":null,"abstract":"We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.","PeriodicalId":129785,"journal":{"name":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electric-field controlled spin transport in bilayer CrI3\",\"authors\":\"D. Marian, D. Soriano, E. G. Marín, G. Iannaccone, G. Fiori\",\"doi\":\"10.1109/ESSCIRC53450.2021.9567800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.\",\"PeriodicalId\":129785,\"journal\":{\"name\":\"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC53450.2021.9567800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC53450.2021.9567800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

研究了外电场控制下双层CrI3的电荷输运和自旋输运性质。为此,我们重点研究了两种不同的器件结构,即ML-源/BL-通道/ML-漏CrI3和BL-源/BL-通道/BL-漏CrI3,其中ML和BL分别代表单层和双层晶体。电场仅作用于结构的中央bl通道。在第一个器件中,我们只从铁磁性的ML CrI3中注入一个自旋,这使我们能够研究电场对自旋输运性质的影响,即自旋晶体管的工作。第二种结构是基于两个自旋的注入,然后通过电介导的自旋分裂效应过滤,形成自旋过滤装置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electric-field controlled spin transport in bilayer CrI3
We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely ML-source/BL-channel/ML-drain CrI3 and BL-source/BL-channel/BL-drain CrI3, where ML and BL stand for monolayer and bilayer crystals respectively. The electric field is only applied to the central BL-channel of the structure. In the first device, we inject only a single spin from the ferromagnetic ML CrI3 which allows us to study the effect of the electric field in the spin transport properties, i.e. the operation of a spin transistor. The second structure is based on the injection of both spins, that are later filtered by electrically mediated spin-splitting effects, resulting in spin-filter device.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信