K. Shibata, K. Nakayama, M. Ohtsubo, H. Kawasaki, S. Hori, K. Kamei
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引用次数: 8
摘要
采用新研制的0.25µm栅极hemt，研制了一种20 ghz频段的低噪声放大器。该放大器由6个单端单元级联而成，级间无隔离器。HEMT放大器在非冷却工作时的噪声温度为170 K (NF = 2.0 dB)，增益为47 dB，工作频率为17.5至19.5 GHz。在-20℃和-50℃条件下，噪声温度分别为130 K (NF = 1.6 dB)和110 K (NF = 1.4 dB)。
A 20 GHz-band low-noise amplifier has been developed by using newly developed 0.25-µm gate HEMTs. The amplifier has been fabricated by cascading six single-ended unit amplifiers without any isolators at the interstages. The HEMT amplifier exhibits a noise temperature of 170 K (NF = 2.0 dB) and a gain of 47 dB over 17.5 to 19.5 GHz in an uncooled operation. Noise temperatures of 130 K (NF = 1.6 dB) and 110 K (NF = 1.4 dB) have been obtained at -20°C and -50°C, respectively.
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