空穴自旋量子比特的最新进展

Yinan Fang, P. Philippopoulos, D. Culcer, W. A. Coish, S. Chesi
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引用次数: 10

摘要

近年来,基于半导体量子点的空穴自旋量子比特取得了快速发展。我们首先回顾了这些空穴自旋量子比特相对于电子自旋量子比特的主要潜在优势,并给出了描述它们的一般理论框架。讨论了价带中自旋-轨道耦合和超精细相互作用的基本特征,以及对相干性和自旋操纵的影响。在文章的第二部分,我们提供了一个实验实现的调查,它涵盖了基于GaAs, Si或Si/Ge异质结构的相对广泛的器件。我们以一个简短的展望作为结束。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Recent advances in hole-spin qubits
In recent years, hole-spin qubits based on semiconductor quantum dots have advanced at a rapid pace. We first review the main potential advantages of these hole-spin qubits with respect to their electron-spin counterparts, and give a general theoretical framework describing them. The basic features of spin-orbit coupling and hyperfine interaction in the valence band are discussed, together with consequences on coherence and spin manipulation. In the second part of the article we provide a survey of experimental realizations, which spans a relatively broad spectrum of devices based on GaAs, Si, or Si/Ge heterostructures. We conclude with a brief outlook.
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