M. Delaney, C. Chou, L. Larson, J. Jensen, D. Deakin, A. Brown, W. Hooper, M. Thompson, L. McCray, S. Rosenbaum
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GaAs MESFET digital integrated circuits fabricated with low temperature buffer technology
High-performance digital integrated circuits have been fabricated with low-temperature buffer GaAs MESFET technology. The materials structure eliminates side-gating and light sensitivity, and improves FET performance. Individual transistors with a 0.2-μm gate length have a transconductance gm of 600 mS/mm and an extrapolated cutoff frequency fT of 80 GHz. Static SCFL frequency dividers fabricated in this technology exhibit a maximum clock rate of 22 GHz
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