Analytical Model of a Strain Induced Lateral Channel Workfunction Engineered Surrounding Gate MOSFET

In this paper, we have investigated the impact of biaxial strain on a linearly graded work-function engineered (WFEG) surrounding gate (SRG) MOSFET. A pseudo-morphic deposition of thin layer silicon on a relaxed SiGe buffer develops a biaxial strain in the silicon channel which affects the band structures of the deposited silicon film. This modulation decreases the effective bandgap and enhances the electron affinity along with a net decrease in the effective masses of current carriers thereby improving the device characteristics. A well-known Poisson Equation is solved in the channel region to analytically acquire the surface potential and threshold voltage profile. The results are also been validated by TCAD simulations.