三维ram和cam的可测试性探索

Yu-Jen Huang, Jin-Fu Li
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引用次数: 9

摘要

三维集成是一种新兴的集成电路技术。与2d集成相比,它提供了许多优点。然而,测试3d芯片是一项非常具有挑战性的工作。三维芯片的测试包括已知好模(KGD)测试和叠层三维芯片测试。本文分析了三维随机存取存储器(ram)和内容可寻址存储器(CAMs)在具有功能故障的堆叠三维集成电路测试阶段的测试复杂性。分析结果表明,三维凸轮和ram的测试复杂度低于二维凸轮和ram的测试复杂度。在此基础上,提出了简单的可测性设计(DFT)方法,进一步降低了三维ram和cam的测试复杂度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Testability Exploration of 3-D RAMs and CAMs
Three-dimensional (3-D) integration is an emerging integrated circuit technology. It offers many advantages over the 2-D integration. However, testing 3-D chips is a very challenging job. The testing of a 3-D chip includes the testing for known good die (KGD) and the testing of stacked 3-D chip. This paper analyzes the test complexities of 3-D random access memories (RAMs) and content addressable memories (CAMs) in the phase of testing of stacked 3-D ICs with functional faults. Analysis results show that the 3-D CAMs and RAMs can be tested with lower test complexity than the 2-D ones. Furthermore, simple design-for-testability (DFT) methods are proposed to reduce the test complexity of 3-D RAMs and CAMs further.
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