低功率块积累mosfet的阈值电压滚降模型

Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372) Pub Date : 1998-09-13 DOI:10.1109/ASIC.1998.722889

B. Austin, X. Tang, J. Meindl, M. Dennen, W. Richards

{"title":"低功率块积累mosfet的阈值电压滚降模型","authors":"B. Austin, X. Tang, J. Meindl, M. Dennen, W. Richards","doi":"10.1109/ASIC.1998.722889","DOIUrl":null,"url":null,"abstract":"A closed-form analytical threshold voltage roll-off model (/spl Delta/V/sub T/) for bulk accumulation MOSFETs, namely, buried channel accumulation (BCA) and surface channel accumulation (SCA), has been derived. Results show that scaling of BCA/SCA devices to the L=0.1 /spl mu/m range while maintaining performance is feasible for devices with very shallow tubs and source/drain junctions. It is also observed that for such devices, the SGA /spl Delta/V/sub T/ can be substantially smaller than the conventional surface channel inversion MOSFET /spl Delta/V/sub T/.","PeriodicalId":104431,"journal":{"name":"Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Threshold voltage roll-off model for low power bulk accumulation MOSFETs\",\"authors\":\"B. Austin, X. Tang, J. Meindl, M. Dennen, W. Richards\",\"doi\":\"10.1109/ASIC.1998.722889\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A closed-form analytical threshold voltage roll-off model (/spl Delta/V/sub T/) for bulk accumulation MOSFETs, namely, buried channel accumulation (BCA) and surface channel accumulation (SCA), has been derived. Results show that scaling of BCA/SCA devices to the L=0.1 /spl mu/m range while maintaining performance is feasible for devices with very shallow tubs and source/drain junctions. It is also observed that for such devices, the SGA /spl Delta/V/sub T/ can be substantially smaller than the conventional surface channel inversion MOSFET /spl Delta/V/sub T/.\",\"PeriodicalId\":104431,\"journal\":{\"name\":\"Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASIC.1998.722889\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASIC.1998.722889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文推导了块积累型mosfet的闭式解析阈值电压滚转模型(/spl Delta/V/sub T/)，即埋藏沟道积累(BCA)和表面沟道积累(SCA)。结果表明，在保持性能的同时，将BCA/SCA器件缩放到L=0.1 /spl mu/m范围对于具有非常浅的槽和源/漏结的器件是可行的。还观察到，对于这种器件，SGA /spl Delta/V/sub T/可以大大小于传统的表面沟道反转MOSFET /spl Delta/V/sub T/。

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Threshold voltage roll-off model for low power bulk accumulation MOSFETs

A closed-form analytical threshold voltage roll-off model (/spl Delta/V/sub T/) for bulk accumulation MOSFETs, namely, buried channel accumulation (BCA) and surface channel accumulation (SCA), has been derived. Results show that scaling of BCA/SCA devices to the L=0.1 /spl mu/m range while maintaining performance is feasible for devices with very shallow tubs and source/drain junctions. It is also observed that for such devices, the SGA /spl Delta/V/sub T/ can be substantially smaller than the conventional surface channel inversion MOSFET /spl Delta/V/sub T/.

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来源期刊

Proceedings Eleventh Annual IEEE International ASIC Conference (Cat. No.98TH8372)

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