T. Iwasaki, Zhongwang Wang, J. Reynolds, M. Muruganathan, H. Mizuta
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Physisorption doping induced multiple dots behavior in graphene nanoconstrictions
We report the single carrier transport properties in the p-doped/less-doped graphene nanoconstriction structures. In the doped graphene devices, the overlapped Coulomb diamond characteristics are observed around the charge neutrality point (CNF) at 5 K. Reducing doping in graphene by annealing, the periodic peaks appear in the certain gate voltage range around the CNP. Additionally, the non-overlapped Coulomb diamond characteristic is observed. These results suggest that unintentional charging island formation in graphene nanodevices can be avoided by decreasing the doping concentration.
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