{"title":"自发极化和压电极化对AlInN/GaN异质结构的影响","authors":"L. Semra, A. Telia, M. Kaddeche, A. Soltani","doi":"10.1109/ICENGTECHNOL.2012.6396158","DOIUrl":null,"url":null,"abstract":"In this work Al<sub>x</sub>In<sub>1-x</sub>N/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10<sup>-6</sup> C/cm<sup>2</sup>) to (-5.25×10<sup>-6</sup> C/cm<sup>2</sup>). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (-14×10<sup>-6</sup> C/cm<sup>2</sup>) to (10.85×10<sup>-6</sup> C/cm<sup>2</sup>). The calculated sheet carrier concentration is 6.3×10<sup>12</sup>, 1.73, 2.88 and 4.08×10<sup>13</sup>cm<sup>-2</sup> for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied.","PeriodicalId":149484,"journal":{"name":"2012 International Conference on Engineering and Technology (ICET)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure\",\"authors\":\"L. Semra, A. Telia, M. Kaddeche, A. Soltani\",\"doi\":\"10.1109/ICENGTECHNOL.2012.6396158\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work Al<sub>x</sub>In<sub>1-x</sub>N/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10<sup>-6</sup> C/cm<sup>2</sup>) to (-5.25×10<sup>-6</sup> C/cm<sup>2</sup>). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (-14×10<sup>-6</sup> C/cm<sup>2</sup>) to (10.85×10<sup>-6</sup> C/cm<sup>2</sup>). The calculated sheet carrier concentration is 6.3×10<sup>12</sup>, 1.73, 2.88 and 4.08×10<sup>13</sup>cm<sup>-2</sup> for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied.\",\"PeriodicalId\":149484,\"journal\":{\"name\":\"2012 International Conference on Engineering and Technology (ICET)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Engineering and Technology (ICET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICENGTECHNOL.2012.6396158\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Engineering and Technology (ICET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICENGTECHNOL.2012.6396158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of spontaneous and piezoelectric polarization on AlInN/GaN heterostructure
In this work AlxIn1-xN/GaN heterostructure is considered taking into account the effects of spontaneous and piezoelectric polarizations on sheet carrier concentration versus alloy composition. It is found that piezoelectric polarization decreases from (14.8×10-6 C/cm2) to (-5.25×10-6 C/cm2). Lattice matching appears for alloy composition between x = 0.81 and x = 0.82 when the piezoelectric polarization vanishes. The induced polarization varies from (-14×10-6 C/cm2) to (10.85×10-6 C/cm2). The calculated sheet carrier concentration is 6.3×1012, 1.73, 2.88 and 4.08×1013cm-2 for alloy compositions x = 0.75, 0.80, 0.85 and 0.90 respectively. Also barrier thickness on sheet carrier concentration is studied.
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