Lateral gate suspended-body carbon nanotube field-effect-transistors with sub-100nm air gap by precise positioning method

Carbon nanotubes (CNTs) have been intensively studied for nanoelectromechanical systems (NEMS) applications owing to their remarkable electrical and mechanical properties. Efforts have been made in single-walled CNT field-effect transistor (SWCNTFET) based ultrasensitive mass detection, radio-frequency (RF) signal processing, etc [1]. However, current techniques of manipulating CNTs (including: in-situ CNT growth and post-synthesis fabrication) often precludes bottom-up integration with pre-existing complementary metal-oxide-semiconductor (CMOS) circuits [2], due to: high process temperature, lack of self-alignment accuracy, etc.