M. Rodwell, S. Lee, C. Huang, D. Elias, V. Chobpattanna, J. Rode, H. Chiang, P. Choudhary, R. Maurer, M. Urteaga, B. Brar, A. Gossard, S. Stemmer
{"title":"用于VLSI和THz应用的纳米InP电子器件","authors":"M. Rodwell, S. Lee, C. Huang, D. Elias, V. Chobpattanna, J. Rode, H. Chiang, P. Choudhary, R. Maurer, M. Urteaga, B. Brar, A. Gossard, S. Stemmer","doi":"10.1109/DRC.2014.6872374","DOIUrl":null,"url":null,"abstract":"While the growth of III-As and III-P semiconductors is well-established, and their transport properties well-understood, the performance of high-frequency and VLSI electron devices can still be substantially improved. Here we review design principles, experimental efforts, and intermediate results, in the development of nm and THz electron devices, including nm InAs/InGaAs planar MOSFETs and finFETs for VLSI, InGaAs/InP DHBTs for 0.1-1 THz wireless communications and imaging, and ~5nm InAs/InGaAs Schottky diodes for mid-IR mixing.","PeriodicalId":293780,"journal":{"name":"72nd Device Research Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Nanometer InP electron devices for VLSI and THz applications\",\"authors\":\"M. Rodwell, S. Lee, C. Huang, D. Elias, V. Chobpattanna, J. Rode, H. Chiang, P. Choudhary, R. Maurer, M. Urteaga, B. Brar, A. Gossard, S. Stemmer\",\"doi\":\"10.1109/DRC.2014.6872374\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"While the growth of III-As and III-P semiconductors is well-established, and their transport properties well-understood, the performance of high-frequency and VLSI electron devices can still be substantially improved. Here we review design principles, experimental efforts, and intermediate results, in the development of nm and THz electron devices, including nm InAs/InGaAs planar MOSFETs and finFETs for VLSI, InGaAs/InP DHBTs for 0.1-1 THz wireless communications and imaging, and ~5nm InAs/InGaAs Schottky diodes for mid-IR mixing.\",\"PeriodicalId\":293780,\"journal\":{\"name\":\"72nd Device Research Conference\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"72nd Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2014.6872374\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"72nd Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2014.6872374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanometer InP electron devices for VLSI and THz applications
While the growth of III-As and III-P semiconductors is well-established, and their transport properties well-understood, the performance of high-frequency and VLSI electron devices can still be substantially improved. Here we review design principles, experimental efforts, and intermediate results, in the development of nm and THz electron devices, including nm InAs/InGaAs planar MOSFETs and finFETs for VLSI, InGaAs/InP DHBTs for 0.1-1 THz wireless communications and imaging, and ~5nm InAs/InGaAs Schottky diodes for mid-IR mixing.
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