S. Dunkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Muller, T. Melde, H. Mulaosmanovic, S. Slesazeck, S. Müller, J. Ocker, M. Noack, D. Lohr, P. Polakowski, J. Müller, T. Mikolajick, J. Hontschel, B. Rice, J. Pellerin, S. Beyer
{"title":"基于ffet的超低功耗超高速嵌入式NVM技术，适用于22nm及以上FDSOI","authors":"S. Dunkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Muller, T. Melde, H. Mulaosmanovic, S. Slesazeck, S. Müller, J. Ocker, M. Noack, D. Lohr, P. Polakowski, J. Müller, T. Mikolajick, J. Hontschel, B. Rice, J. Pellerin, S. Beyer","doi":"10.1109/IEDM.2017.8268425","DOIUrl":null,"url":null,"abstract":"We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm2 At this point program/erase endurance cycles up to 105 are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"295","resultStr":"{\"title\":\"A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond\",\"authors\":\"S. Dunkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Muller, T. Melde, H. Mulaosmanovic, S. Slesazeck, S. Müller, J. Ocker, M. Noack, D. Lohr, P. Polakowski, J. Müller, T. Mikolajick, J. Hontschel, B. Rice, J. Pellerin, S. Beyer\",\"doi\":\"10.1109/IEDM.2017.8268425\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm2 At this point program/erase endurance cycles up to 105 are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.\",\"PeriodicalId\":412333,\"journal\":{\"name\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"295\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2017.8268425\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm2 At this point program/erase endurance cycles up to 105 are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.
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