利用高分辨率CDSEM测量技术表征光子器件中的光传播损耗

S. Levi, R. L. Tiec, C. Dupré, C. Vannuffel, T. Dewolf, S. Garcia, K. Millard, B. Meynard, Y. Lee, M. Colard, H. A. Dujaili, J. Faugier-Tovar, Shinsuke Mizuno
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引用次数: 0

摘要

在核心材料(例如Si或SiN)晶圆上制造的光子器件,使用半导体制造技术,被证明可以提高数据传输速度,消耗更少的功率,并且比传统电子电路产生更少的热量。光的传播损耗与波导边缘粗糙度密切相关。为了降低粗糙度,我们评估了三种图像化方法,干法和湿法光刻,OPC(光学接近校正)和氢退火,在SOI晶圆上制造两种波导,RIB和STRIP。在本文中,我们展示了一种创新的方法来测量直线和弯曲WGs边缘粗糙度的CDSEM。CD粗糙度测量与光传播损耗相关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of Light propagation loss in Photonics devices using High-Resolution CDSEM metrology
Photonic devices manufactured on core materials (by example Si or SiN) wafers, using a semiconductor fabrication technique, was demonstrated to increase data transmission speed, consume less power, and generate less heat than conventional electronic circuits. Light propagation loss strongly dependents on the Waveguide edge roughness. To reduce roughness, three patterning methods are evaluated, dry vs wet lithography, OPC (Optical proximity correction) and Hydrogen anneal on two types of waveguides, RIB and STRIP, fabricated on SOI wafer. In this paper, we demonstrate innovative methods to measure edge roughness of straight and curved WGs with a CDSEM. CD roughness measurements are correlated with light propagation loss.
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