RF Analysis of a Fully Gate Covered Junctionless FinFET for Improved Performance

This work is an analysis of various RF performance figure of merits of a fully gate-covered Junctionless FinFET at two gate lengths (20nm and 40nm) with a high-k dielectric layer as gate oxide and is compared a conventional FinFET. The simulation results exhibit great performance increment for the smaller 20nm device terms of cutoff frequency(fT) which shows about 20% increase, the maximum oscillation frequency (fmax) which also amplified by more than five times. Other RF parameters such as Gain Frequency Product (GFP) and Transconductance Frequency Product (TFP) for the nm device, also exhibited a considerable increment over the conventional device. Gain transconductance frequency Product (GTFP) was also observed to be enhanced by more than 2 times. All these parameters make the device attractive candidate for RF applications.