Development of hierarchical simulation framework for design and optimization of molecular based flash cell

The field of molecular electronics continues to spur interest in the quest for miniaturization and reduction of operational power of electron devices. Most of the systems described in the literature are based on organic molecules, such as benzene, ferrocene and fullerenes [1]. However, the use of inorganic molecules known as polyoxometalates (POMs) (see Fig. 1 and Fig. 2) could offer several important advantages over the conventional and organic based devices. The interest in POMs for flash cell applications stems from the fact that POMs are highly redox active molecules and that they can also be doped with electronically active heteroatoms [3]. They can undergo multiple reversible reductions/oxidations, which makes them attractive candidates for multi-bit storage in flash memory cells. Our recent work showed that POMs are more compatible with existing CMOS processes than organic molecules and they can replace the polysilicon floating gate in contemporary flash cell devices [2]. In this work, we discuss a further improvement and development of our simulation framework and models, e.g. Poisson distribution of the molecules in the oxide, introducing a various device geometry such as FDSOI and nanowires and improved simulation flow.