{"title":"全电场范围内肖特基势垒逆流的TE-TFE-FE复合模型","authors":"Wenshen Li, D. Jena, H. Xing","doi":"10.1109/DRC55272.2022.9855788","DOIUrl":null,"url":null,"abstract":"Schottky barriers in wide bandgap (WBG) semiconductors can sustain very large electric fields under reverse bias due to the access of very large barrier heights (>1 eV) and the very high intrinsic breakdown field (>3 MV/cm) of WBG semiconductors [1]. Under high surface electric-fields (E), the ideal reverse-bias leakage current (JR) is dominated by barrier tunneling rather than thermionic emission (TE), thus thermionic-field-emission (TFE) or field-emission (FE) becomes the dominant mechanism [1] [2]. Therefore, to accurately describe the reverse current over the entire surface electric-field range, TFE and FE models are required in addition to the TE model.","PeriodicalId":200504,"journal":{"name":"2022 Device Research Conference (DRC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range\",\"authors\":\"Wenshen Li, D. Jena, H. Xing\",\"doi\":\"10.1109/DRC55272.2022.9855788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Schottky barriers in wide bandgap (WBG) semiconductors can sustain very large electric fields under reverse bias due to the access of very large barrier heights (>1 eV) and the very high intrinsic breakdown field (>3 MV/cm) of WBG semiconductors [1]. Under high surface electric-fields (E), the ideal reverse-bias leakage current (JR) is dominated by barrier tunneling rather than thermionic emission (TE), thus thermionic-field-emission (TFE) or field-emission (FE) becomes the dominant mechanism [1] [2]. Therefore, to accurately describe the reverse current over the entire surface electric-field range, TFE and FE models are required in addition to the TE model.\",\"PeriodicalId\":200504,\"journal\":{\"name\":\"2022 Device Research Conference (DRC)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Device Research Conference (DRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC55272.2022.9855788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Device Research Conference (DRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC55272.2022.9855788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range
Schottky barriers in wide bandgap (WBG) semiconductors can sustain very large electric fields under reverse bias due to the access of very large barrier heights (>1 eV) and the very high intrinsic breakdown field (>3 MV/cm) of WBG semiconductors [1]. Under high surface electric-fields (E), the ideal reverse-bias leakage current (JR) is dominated by barrier tunneling rather than thermionic emission (TE), thus thermionic-field-emission (TFE) or field-emission (FE) becomes the dominant mechanism [1] [2]. Therefore, to accurately describe the reverse current over the entire surface electric-field range, TFE and FE models are required in addition to the TE model.
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