增量布局感知模拟设计方法

Mohannad Elshawy, M. Dessouky
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引用次数: 5

摘要

随着CMOS在超深亚微米区域的不断缩放,各种布局效应变得越来越显著。因此,器件特性和电路性能受到很大影响。这导致设计模拟电路的困难,因为它们对布局中的期望位置非常敏感。本文提出了一种在方案设计初期考虑布局依赖效应的设计方法。使用这种方法,电路设计者将意识到器件特性的变化,如阈值电压和迁移率。为了验证设计方法,设计了一个采用28纳米CMOS技术的两级Miller OTA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Incremental layout-aware analog design methodology
With the continuous scaling of CMOS into ultra-deep sub-micron regions, various layout effects are becoming more significant. Accordingly, device characteristics and circuit performance are highly affected. This leads to difficulty in designing analog circuits as they become very sensitive to desire locations in the layout. This paper proposes a design methodology that takes into account the layout dependent effects at early stage of schematic design. Using this methodology the circuit designer will be aware of device characteristics variations such as threshold voltage and mobility. To validate the design methodology, a two stage Miller OTA using 28 nm CMOS technology is designed.
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