OptMem:暗硅感知低延迟混合存储器设计

S. Onsori, Arghavan Asad, K. Raahemifar, M. Fathy
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引用次数: 4

摘要

在本文中,我们提出了一个凸优化模型来设计三维(3D)堆叠混合存储系统,以提高暗硅时代的性能。我们的凸模型优化了静态随机存取存储器(SRAM)和自旋转移扭矩磁随机存取存储器(STT-RAM)在存储器层上的数量和位置,以利用这两种技术的优势。功耗是暗硅时代的主要挑战,本文将其描述为主要制约因素,并通过详细的优化模型来满足这一要求,从而设计出可感知暗硅的3D Chip-Multiprocessor (CMP)。实验结果表明,与基准存储器设计相比,该架构的能耗和性能平均分别提高了25.8%和12.9%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
OptMem: Dark-silicon aware low latency hybrid memory design
In this article, we present a convex optimization model to design a three dimension (3D)stacked hybrid memory system to improve performance in the dark silicon era. Our convex model optimizes numbers and placement of static random access memory (SRAM) and spin-transfer torque magnetic random-access memory(STT-RAM) memories on the memory layer to exploit advantages of both technologies. Power consumption that is the main challenge in the dark silicon era is represented as a main constraint in this work and it is satisfied by the detailed optimization model in order to design a dark silicon aware 3D Chip-Multiprocessor (CMP). Experimental results show that the proposed architecture improves the energy consumption and performanceof the 3D CMPabout 25.8% and 12.9% on averagecompared to the Baseline memory design.
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