{"title":"低温生长MBE GaAs中原生缺陷的退火特性","authors":"J. Darmo, F. Dubecký, P. Kordos, A. Forster","doi":"10.1109/SIM.1996.570880","DOIUrl":null,"url":null,"abstract":"Deep-level states in low-temperature-grown MBE GaAs are analyzed from the viewpoint of thermal stability. Gallium vacancy V/sub Ga/-related states have two annealing stages with the on-set temperature at about 310 and 430/spl deg/C. Low temperature stage is connected with mobile arsenic interstitial A/sub Si/, while an interaction between V/sub Ga/ and arsenic antiside As/sub Ga/ is dominant in the later stage. Essential annealing kinetic characteristics were determined for both stages. Finally, the migration enthalpy for As/sub Ga/ and the formation enthalpy of annealing of the EL6 state were estimated.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Annealing characteristics of native defects in low-temperature-grown MBE GaAs\",\"authors\":\"J. Darmo, F. Dubecký, P. Kordos, A. Forster\",\"doi\":\"10.1109/SIM.1996.570880\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deep-level states in low-temperature-grown MBE GaAs are analyzed from the viewpoint of thermal stability. Gallium vacancy V/sub Ga/-related states have two annealing stages with the on-set temperature at about 310 and 430/spl deg/C. Low temperature stage is connected with mobile arsenic interstitial A/sub Si/, while an interaction between V/sub Ga/ and arsenic antiside As/sub Ga/ is dominant in the later stage. Essential annealing kinetic characteristics were determined for both stages. Finally, the migration enthalpy for As/sub Ga/ and the formation enthalpy of annealing of the EL6 state were estimated.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570880\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570880","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Annealing characteristics of native defects in low-temperature-grown MBE GaAs
Deep-level states in low-temperature-grown MBE GaAs are analyzed from the viewpoint of thermal stability. Gallium vacancy V/sub Ga/-related states have two annealing stages with the on-set temperature at about 310 and 430/spl deg/C. Low temperature stage is connected with mobile arsenic interstitial A/sub Si/, while an interaction between V/sub Ga/ and arsenic antiside As/sub Ga/ is dominant in the later stage. Essential annealing kinetic characteristics were determined for both stages. Finally, the migration enthalpy for As/sub Ga/ and the formation enthalpy of annealing of the EL6 state were estimated.
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