影响PECVD设备等离子体增强a- si:H结晶的工艺参数[TFTs]

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003308

R. García, M. Estrada, A. Cerdeira, L. Reséndiz

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引用次数: 0

摘要

报道了在沉积a-Si:H层的PECVD系统中，通过等离子体增强结晶获得的低温多晶硅层。分析了层内磷浓度、氢对硅烷的稀释度、氢等离子体工艺温度和退火温度对层的结晶时间、表面织构和电阻率的影响。通过电、x射线衍射和原子力显微镜对各层进行了表征。讨论了该多晶薄膜的特性，并与其他方法制备的多晶薄膜进行了比较。

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Process parameters affecting plasma enhanced crystallization of a-Si:H using a PECVD equipment [TFTs]

Reports low temperature polysilicon layers obtained by plasma enhanced crystallization performed in the same PECVD system where the a-Si:H layers are deposited. We analyze the effects of phosphorous concentration in the layer, hydrogen dilution of silane, temperature of the hydrogen plasma process and annealing temperature on the crystallization time, surface texture and resistivity of the layers. Layers were characterized electrically, by X-ray diffractometry and by atomic force microscopy. The characteristics of the polycrystalline films are discussed and compared with those of polycrystalline layers obtained by other methods.

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来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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