一个7 ns周期，高速双比较凸轮在0.6 /spl亩/米GaAs

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Pub Date : 1995-10-29 DOI:10.1109/GAAS.1995.529019

M. Venkataraman, M. Pai, S. Canaga

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引用次数: 0

摘要

本文描述了一种采用14位双比较内容可寻址存储器(CAM)的256条目，其快速命中检测访问时间为5.5 ns，周期时间为7 ns。此外，CAM标记多个命中，并在发生单个命中时输出命中地址。凸轮的尺寸为3.5 mm/spl倍/ 8mm。电压为-2.0 V、85/spl℃时的功耗为8.8 W。该芯片采用Vitesse的0.6 /spl mu/m H-GaAsIII增强/耗尽MESFET技术制造。

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A 7 ns cycle, high speed dual compare CAM in 0.6 /spl mu/m GaAs

A 256 entry by 14-bit dual compare content addressable memory (CAM) with a fast hit detect access time of 5.5 ns and a cycle time of 7 ns is described in this paper. In addition, the CAM flags multiple hits and outputs the hit address when a single hit has occurred. The size of the CAM is 3.5 mm/spl times/8 mm. The power dissipation, at a vtt of -2.0 V, and 85/spl deg/C is 8.8 W. The chip was fabricated using Vitesse's 0.6 /spl mu/m H-GaAsIII enhancement/depletion MESFET technology.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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