C. Landon, Lei Jiang, D. Pantuso, I. Meric, K. Komeyli, J. Hicks, Daniel Schroeder
{"title":"栅极全能器件的局部热效应","authors":"C. Landon, Lei Jiang, D. Pantuso, I. Meric, K. Komeyli, J. Hicks, Daniel Schroeder","doi":"10.1109/IRPS48203.2023.10117903","DOIUrl":null,"url":null,"abstract":"Gate-all-around (GAA) devices continue the technology trends of increased localized thermal confinement and higher performance. We describe the methodology used for localized thermal analysis and data collection of temperature rise on the transistor scale and compare GAA cell thermal resistance to Fin-FET cells. We demonstrate that the implications of GAA on device temperature are not a constraint to realizing the full technology benefits with proper thermal management.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Localized thermal effects in Gate-all-around devices\",\"authors\":\"C. Landon, Lei Jiang, D. Pantuso, I. Meric, K. Komeyli, J. Hicks, Daniel Schroeder\",\"doi\":\"10.1109/IRPS48203.2023.10117903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gate-all-around (GAA) devices continue the technology trends of increased localized thermal confinement and higher performance. We describe the methodology used for localized thermal analysis and data collection of temperature rise on the transistor scale and compare GAA cell thermal resistance to Fin-FET cells. We demonstrate that the implications of GAA on device temperature are not a constraint to realizing the full technology benefits with proper thermal management.\",\"PeriodicalId\":159030,\"journal\":{\"name\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS48203.2023.10117903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10117903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Localized thermal effects in Gate-all-around devices
Gate-all-around (GAA) devices continue the technology trends of increased localized thermal confinement and higher performance. We describe the methodology used for localized thermal analysis and data collection of temperature rise on the transistor scale and compare GAA cell thermal resistance to Fin-FET cells. We demonstrate that the implications of GAA on device temperature are not a constraint to realizing the full technology benefits with proper thermal management.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
