隧道场效应管技术的进展与进展

2020 6th International Conference on Signal Processing and Communication (ICSC) Pub Date : 2020-03-01 DOI:10.1109/ICSC48311.2020.9182717

Saurabh Chaturvedi, Vanshika Sharma, Nitin Singh, S. Akhter

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引用次数: 1

摘要

本文详细讨论了隧道场效应晶体管(tfet)的结构、性能、优点和局限性。本文对传统金属氧化物半导体场效应管(mosfet)和tfet的性能进行了比较研究。本文描述了tfet的电特性，并探讨了最近报道的各种架构和方法来提高器件性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Progress and Advancements in Tunnel FET Technology

This paper presents a detailed discussion on the structures, performances, advantages, and limitations of tunnel field-effect transistors (TFETs). The paper includes a comparative study of the performances of conventional metal-oxide-semiconductor FETs (MOSFETs) and TFETs. The paper describes the electrical characteristics of TFETs and explores various recently reported architectures and approaches to improve the device performances.

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2020 6th International Conference on Signal Processing and Communication (ICSC)

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