用蒙特卡罗技术研究高电流下先进Si BJT的信号延迟

2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) Pub Date : 2000-09-06 DOI:10.1109/SISPAD.2000.871203

P. Palestri, L. Selmi, F. Hurkx, J. Slotboom

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引用次数: 2

摘要

我们提出了一种新的蒙特卡罗技术来研究具有相关非局部效应的高级bjt的信号延迟。该方法适用于分析存在显著非平衡输运效应和大电流的基极和集电极信号延迟，并验证延迟表达式在紧凑模型中的物理意义和适用性。

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A Monte Carlo technique to investigate signal delays of advanced Si BJT's up to high currents

We present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring relevant nonlocal effects. The method is suited to analyze base and collector signal delays in presence of significant nonequilibrium transport effects and up to high currents, and to verify the physical meaning and applicability of delay expressions for compact models.

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2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)

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