利用发光二极管晶片直接观察接触区电流密度分布

S. Tsukiji, S. Sawada, T. Tamai, Y. Hattori, K. Iida
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引用次数: 4

摘要

从理论上讲,拉普拉斯方程可以用来计算电触点中的电流收缩行为。关于电流收缩的实际行为,虽然对接触电阻的测量有很多报道,但对接触区电流密度分布的实验详细行为的报道并不多。因此,我们在本研究中尝试使用半导体晶片来观察触点内电流密度分布的行为。结果证实,电流均匀分布在有氧化膜覆盖的接触区域,而在没有氧化膜的情况下,电流集中在接触的外围。这些结果与先前的理论和电场分析的结果定性地一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct Observation of Current Density Distribution in Contact Area by Using Light Emission Diode Wafer
Theoretically the Laplace equation can be used to calculate the current constriction behavior in electrical contacts. On the actual behavior of current constriction, although there are many reports on the contact resistance measurement, not many reports on the detailed behavior of current density distribution in the contact area experimentally. Therefore, we attempted to observe the behavior of the current density distribution in the contact by using semiconductor wafers in this study. As a result, it was confirmed that electric current is uniformly distributed over the contact area covered by an oxide film, while it is concentrated at the periphery of the contact if there is no oxide film. These results qualitatively agree with the results of the earlier theory and electric field analysis.
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